Semiconductors that propelled the 5G era, particularly silicon‑based transistors, have now reached their limits in terms of high‑frequency signal transmission, performance, and power efficiency. Even GaN (gallium nitride)‑based devices, which offer higher frequency and power density, face inherent structural and thermal management issues. To meet the extreme demands of the 6G era—ultrafast data transfer speeds and ultra‑low latency—a fundamentally new semiconductor structure and operating principle is required. **Spintronics**, which utilizes not only the electron’s charge but also its spin (magnetic moment), emerges as a promising candidate. By leveraging this property, spintronics can redefine information processing paradigms at the physical level.

A research team at the University of Bristol introduced in *Nature Electronics* a new GaN‑based architecture called **SLCFETs (superlattice castellated field‑effect transistors)**. The device arranges thousands of sub‑100nm “fins” in parallel within GaN material and exploits a newly discovered property known as the “latch effect” to dramatically enhance RF amplification performance. This latch effect allows highly sensitive current control within the fin structures, enabling exceptionally high power efficiency in the W‑band frequency range (75–110 GHz). This architectural innovation simultaneously improves both performance and power efficiency, surpassing conventional single‑channel transistor designs.

In experiments, SLCFETs functioned as RF amplifiers operating in the **W‑band (75–110 GHz)**, achieving a current density of 4.8 A/mm and power‑added efficiency (PAE) exceeding 40%. At 94 GHz, it demonstrated output exceeding 10 W/mm. The researchers conducted detailed measurements across more than 1,000 fins and identified rapid current surges within individual fins—verifying the latch effect through extensive 3D simulations and long‑term tests. Notably, the addition of polymer coatings between fins ensured thermal stability and structural uniformity. These results point to strong commercial potential and operational reliability of the technology.

The applications of this technology extend across telecommunications, healthcare, autonomous driving, and tactile transmission. 6G networks will require terabit‑scale speeds, sub‑millisecond latency, and ultra‑wide bandwidth—all of which demand an entirely new transistor architecture. The Bristol team demonstrated that their SLCFETs design could power 6G base stations, satellite communication, edge computing, LIDAR for autonomous vehicles, and control of remote surgery robots. Enhanced bandwidth and high‑power efficiency will enable real‑time data transfer in autonomous vehicle sensors and medical equipment. In human interaction applications, such as tactile feedback, the reduction of transmission delay will enable human‑level responsiveness.

The study proposes further optimization of **power density and interface design** for near‑term commercialization of GaN SLCFETs. GaN‑based RF components are already widely used in 5G and power transmission industries, and SLCFETs offer compatibility with existing manufacturing processes. Industry partners are now evaluating the technology for commercialization. Next steps include increasing fin density, optimizing thermal management, and integrating with semiconductor fabrication pipelines. The resulting improvements will significantly influence supply chains, the IoT ecosystem, and the communications hardware sector. Reducing energy consumption, maximizing frequency efficiency, and improving device reliability will be key drivers of adoption.

Currently in prototype stage, the technology must undergo further **lifetime and reliability testing** to transition to commercial products. Optimizing mass production processes, securing frequency stability certifications, and meeting international regulatory standards remain critical tasks. Additional work is needed to ensure long‑term thermal stability, ensure 5G compatibility, and meet global spectrum regulations. Scaling GaN substrate production, lowering packaging costs, and developing cost‑effective production models are parallel priorities. Nevertheless, the technology is projected to achieve commercial viability within **three to five years**, posing a significant challenge to established players in the global semiconductor market.

In conclusion, the University of Bristol’s GaN SLCFETs technology—combining spintronics principles with latch‑effect architecture—redefines the boundaries of communication speed and power efficiency. It represents not merely a new transistor, but the foundation for **a new paradigm in 6G information technology**. Moving forward, spintronics‑based semiconductors will play a pivotal role in enhancing human experience through ultra‑low latency, high reliability, and low power characteristics in applications such as autonomous driving, remote healthcare, and tactile feedback transmission.

ScienceDaily, May 22, 2025, “Researchers make breakthrough in semiconductor technology set to supercharge 6G delivery,” University of Bristol.